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DuPont Photoresists

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DuPont offers a robust, production-proven photoresist product line for semiconductor manufacturing processes, from 365nm down to 13.5nm wavelengths, and exposures that achieve features from 280nm to 20nm, from our i-line/g-line, to our 193 and KrF product families, combined with DuPont’s etching, developing and ancillary products.

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Meeting Generations of Lithography Process Requirements

DuPont offers a robust, production-proven photoresist product line with materials options that meet the requirements across generations of lithography processes from 365nm down to 13.5nm wavelengths, and exposures that achieve features from 280nm to 20nm. The quest to achieve ever smaller technology nodes means photoresists must offer higher and better resolution with a wider depth of focus, with fewer defects. At the same time, legacy nodes rely on tried and true formulations. From i-line/g-line, to 193 and KrF product families, DuPont has photoresists to match your needs. When combined with DuPont’s etching, developing and ancillary products, you get a total materials solution to support your semiconductor manufacturing processes. DuPont broad portfolio also allows us to tailor photoresists to meet specific customer specifications:

DuPont i-Line Products (365nm) SPR™ and MCPR™ photoresists are formulated to support different thickness requirements while achieving high resolution and low defects. DUV Products (248nm) photoresists show excellent product performances with low defects for various applications. 

EPIC™ Photoresists are a series of 193 resists widely used for 193 processes with and without topcoats. DuPont’s EPIC™ IM Resist is designed for the unique environment created by immersion lithography, in which water between the lens and the wafer enables exposure of finer patterns.

Reference Spectrum Resolution Deposition Properties Ancillaries Datasheet

S1800 G2

G, H & I, I optimum

~1 µm

Spin coating

Minimize notch and maintain linewidth control using dyed version

MIF or MIB dev, EC Solvent, SVC14 remover

SPR700

G, H & I, I optimum

~1 µm

Spin coating

High thermal endurance (~130°C)

MIF (ex. MF319), Solvent 11, SVC14 remover

SPR220

G, H&I, I optimum

~1 µm (1.2)

Spin coating

Dry and wet etching. No cracks Au, Cu, Ni/Fe. Fast exposure.

MIF or MIB (ex.351) dev, EC Solvent11, SVC14

SPR955 CM

G, H&I, I optimum

~ 0,35 µm

Spin Coating

High density line and spaces. Contact holes on oxide

Dev 0.26N (preferred) or 0.24N

Ultra I123

I-line

~0,25µm

Spin coating

High density line and spaces. Contact holes on oxide

Developer 0.26N

SPR660

I line

0.325 µm

Spin coating

Performs in both line/space and contact hole on various substrates (SiO2, TiN, and organic anti-reflectant coatings…)

Developer MF, EC Solvent11 SVC14

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