Cts offers a range of negative resists for microelectronics:
|
Product line |
Exposure* |
Application mode |
Material attributes |
Associated chemistries |
| SU8 SU8-2000 SU8-3000 |
I-line | Spin coating | - High aspect ratio with vertical sidewalls - Photo-definable ultra-thick structures - Outstanding thermal and chemical stability - Excellent dry-etch resistance |
EBR PG SU-8 developer Remover PG |
| KMPR 1000 |
I-line |
Spin coating |
- Developed in TMAH (0.26N) |
EBR PG TMAH developers Remover PG |
| SU8 MicroSpray™ |
I-line |
Spray coating |
-Good for perforated or irregular substrates |
SU-8 developer Remover PG |
*LEGEND : DUV=Deep UV = 248nm / I-line = 365nm / h-line = 405 nm / g-line = 436nm
SU-8 2000 Permanent Epoxy Resists
SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels.
| Material uses | Material attributes |
|
• Fabrication of PDMS molds • Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers • Dry etch masks • Rapid prototyping |
• ~ 1-100um in a single-spin @ 3000rpm with good uniformity • High thermal and chemical resistance • Optically transparent • Compatible with i-line imaging equipment |
| Cantilever | Microfluidic actuator | ||
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25 µm wide, 125 µm high Source: MicroChem |
10µm features, 50µm SU-8 2000 coating Source: Micro Resist Technology |
Genoletet, al., IBM-Zurich, Rev. Sci. |
N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (2002) |
SU-8 3000
SU-8 3000 has been formulated for improved adhesion and reduced coating stress. It is being used where high bond strength and improved flexibility for microstructure fabrication is desired. As a result, adhesion to the substrate is greatly improved.
| Material uses | Material attributes |
|
• Waveguides • Microfluidics • Stamps (Nano-Imprint) |
• Improved adhesion • Reduced coating stress • ~ 5-75um in a single-spin @ 3000rpm with good uniformity • Optically transparent • Compatible with i-line imaging equipment |
KMPR
KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and stripped from the substrate.
KMPR can be removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
In deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.
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Material uses: |
Material attributes: |
|
• MEMS • DRIE etch mask • Plating • Permanent Structures |
• High aspect ratio with vertical sidewalls • High chemical and plasma resistance • ~ 4-25µm in a single-spin @ 3000rpm with good uniformity • Excellent adhesion to metals • Wet strips in conventional strippers • Excellent dry etch resistance |
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Permanent |
Plating (100µM tall Ni posts, KMPR removed) |
Deep etch |
Electroformed Ni gear after stripping KMPR Source: Univ. of Birmingham |
SU-8 MicroSpray™ Photoresist aerosol can
MicroChem’s aerosol spray-can photoresists are well suited for a variety of micromachining, and etching processes, requiring semi-conformal coatings on irregular or perforated substrates. MicroSpray™ addresses many of the process and capital requirements for MEMs, microfluidics, opto-electronics and “one-up” printed circuit boards.