Cts offers a range of negative resists for microelectronics:

Product line

Exposure*

Application mode

Material attributes

Associated chemistries

SU8
SU8-2000
SU8-3000
I-line Spin coating - High aspect ratio with vertical sidewalls
- Photo-definable ultra-thick structures
- Outstanding thermal and chemical stability
- Excellent dry-etch resistance

EBR PG

SU-8 developer

Remover PG

KMPR 1000

I-line

Spin coating

- Developed in TMAH (0.26N)
- High aspect ratio with vertical sidewalls
- High chemical and plasma resistance
- Good adhesion to metals

EBR PG

TMAH developers

Remover PG

SU8 MicroSpray™

I-line

Spray coating

-Good for perforated or irregular substrates

SU-8 developer

Remover PG

*LEGEND : DUV=Deep UV = 248nm / I-line = 365nm / h-line = 405 nm / g-line = 436nm

SU-8 2000 Permanent Epoxy Resists

SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels.

Material uses Material attributes

• Fabrication of PDMS molds

• Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers

• Dry etch masks

• Rapid prototyping

• ~ 1-100um in a single-spin @ 3000rpm with good uniformity

• High thermal and chemical resistance

• Optically transparent

• Compatible with i-line imaging equipment

Cantilever Microfluidic actuator




25 µm wide, 125 µm high

Source: MicroChem

10µm features, 50µm SU-8 2000 coating

Source: Micro Resist Technology

Genoletet, al., IBM-Zurich, Rev. Sci.
Instrum., 70, 2398 (1999)

N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (2002)

SU-8 3000

SU-8 3000 has been formulated for improved adhesion and reduced coating stress. It is being used where high bond strength and improved flexibility for microstructure fabrication is desired. As a result, adhesion to the substrate is greatly improved.

Material uses Material attributes

• Waveguides

• Microfluidics

• Stamps (Nano-Imprint)

• Improved adhesion

• Reduced coating stress

• ~ 5-75um in a single-spin @ 3000rpm with good uniformity

• Optically transparent

• Compatible with i-line imaging equipment

KMPR

KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and stripped from the substrate.

KMPR can be removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.

In deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.

Material uses:

Material attributes:

• MEMS

• DRIE etch mask

• Plating

• Permanent Structures

• High aspect ratio with vertical sidewalls

• High chemical and plasma resistance

• ~ 4-25µm in a single-spin @ 3000rpm with good uniformity

• Excellent adhesion to metals

• Wet strips in conventional strippers

• Excellent dry etch resistance




Permanent

Plating

(100µM tall Ni posts, KMPR removed)

Deep etch

Electroformed Ni gear after stripping KMPR

Source: Univ. of Birmingham

SU-8 MicroSpray™ Photoresist aerosol can

MicroChem’s aerosol spray-can photoresists are well suited for a variety of micromachining, and etching processes, requiring semi-conformal coatings on irregular or perforated substrates. MicroSpray™ addresses many of the process and capital requirements for MEMs, microfluidics, opto-electronics and “one-up” printed circuit boards.