Cts offers a range of negative resists for microelectronics:
Product line | Exposure* | Applicationmode | Material attributes | Associated chemistries |
SU8 SU8-2000 SU8-3000 |
i-line | Spin coating |
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EBR PG SU-8 developer Remover PG |
SU-8 TF 6000 | g-, h-, i-line | Spin coating |
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EBR PG U-8 Developer |
KMPR® 1000 | i-line | Spin coating |
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EBR PG TMAH developers Remover PG |
KMSF® 1000 | broadband | Spin coating |
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EBR PG KMSF® Developer |
SU8 MicroSpray | i-line | Spray coating |
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SU-8 developer Remover PG |
*LEGEND : DUV=Deep UV = 248nm / I-line = 365nm / h-line = 405 nm / g-line = 436nm
SU-8 2000 Permanent Epoxy Resists
SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels.
Material uses | Material attributes |
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Cantilever | Microfluidic actuator | ||
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25 µm wide, 125 µm high Source: MicroChem |
10µm features, 50µm SU-8 2000 coating Source: Micro Resist Technology |
Genoletet, al., IBM-Zurich, Rev. Sci. |
N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (2002) |
SU-8 3000
SU-8 3000 has been formulated for improved adhesion and reduced coating stress. It is being used where high bond strength and improved flexibility for microstructure fabrication is desired. As a result, adhesion to the substrate is greatly improved.
Material uses | Material attributes |
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SU-8 TF 6000 Permanent Epoxy Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Material uses | Material attributes |
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KMPR® Epoxy Resist
KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and stripped from the substrate.
KMPR can be removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
In deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.
Material uses | Material attributes |
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Permanent |
Plating (100µM tall Ni posts, KMPR removed) |
Deep etch |
Electroformed Ni gear after stripping KMPR Source: Univ. of Birmingham |
KMSF® 1000 Low Stress Dielectric Photoresist
KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress buffer, passivation or protective layer.
Material uses | Material attributes |
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SU-8 MicroSpray Photoresist aerosol can
Kayaku Advanced Materials, Inc. aerosol spray-can photoresists are well suited for a variety of micromachining, and etching processes, requiring semi-conformal coatings on irregular or perforated substrates. MicroSpray addresses many of the process and capital requirements for MEMs, microfluidics, opto-electronics and “one-up” printed circuit boards.