Cts offers a range of negative resists for microelectronics:

Product line	Exposure*	Applicationmode	Material attributes	Associated chemistries
SU8 SU8-2000 SU8-3000	i-line	Spin coating	High aspect ratio with vertical sidewalls Photo-definable ultra-thick structures Outstanding thermal and chemical stability Excellent dry-etch resistance	EBR PG SU-8 developer Remover PG
SU-8 TF 6000	g-, h-, i-line	Spin coating	High resolution thin film processing Highly uniform thin films Improved substrte adhesion	EBR PG U-8 Developer
KMPR® 1000	i-line	Spin coating	Developed in TMAH (0.26N) High aspect ratio with vertical sidewalls High chemical and plasma resistance Good adhesion to metals	EBR PG TMAH developers Remover PG
KMSF® 1000	broadband	Spin coating	Ultra low stress dielectric Low temperature processing	EBR PG KMSF® Developer
SU8 MicroSpray	i-line	Spray coating	Good for perforated or irregular substrates	SU-8 developer Remover PG

*LEGEND : DUV=Deep UV = 248nm / I-line = 365nm / h-line = 405 nm / g-line = 436nm

SU-8 2000 Permanent Epoxy Resists

SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels.

Material uses	Material attributes
Fabrication of PDMS molds Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers Dry etch masks Rapid prototyping	~ 1-100um in a single-spin @ 3000rpm with good uniformity High thermal and chemical resistance Optically transparent Compatible with i-line imaging equipment

Cantilever

Microfluidic actuator

25 µm wide, 125 µm high

Source: MicroChem

10µm features, 50µm SU-8 2000 coating

Source: Micro Resist Technology

Genoletet, al., IBM-Zurich, Rev. Sci.
Instrum., 70, 2398 (1999)

N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (2002)

SU-8 3000

SU-8 3000 has been formulated for improved adhesion and reduced coating stress. It is being used where high bond strength and improved flexibility for microstructure fabrication is desired. As a result, adhesion to the substrate is greatly improved.

Material uses	Material attributes
Waveguides Microfluidics Stamps (Nano-Imprint)	Improved adhesion Reduced coating stress ~ 5-75um in a single-spin @ 3000rpm with good uniformity Optically transparent Compatible with i-line imaging equipment

SU-8 TF 6000 Permanent Epoxy Resist

SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.

Material uses	Material attributes
High resolution imaging of thin permanent structure MEMS Display pixel walls and dielectric layers	Photo-imageable thin films with high resolution i-line patterning capability Broadband, i-line, g-line and h-line sensitivity Low temperature cure (< 150°C) Highly uniform thin films

KMPR® Epoxy Resist

KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and stripped from the substrate.

KMPR can be removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.

In deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.

Material uses	Material attributes
MEMS DRIE etch mask Plating Permanent Structures	High aspect ratio with vertical sidewalls High chemical and plasma resistance ~ 5-35µm in a single-spin @ 3000rpm with good uniformity Excellent adhesion to metals Wet strips in conventional strippers Excellent dry etch resistance

Permanent

Plating

(100µM tall Ni posts, KMPR removed)

Deep etch

Electroformed Ni gear after stripping KMPR

Source: Univ. of Birmingham

KMSF® 1000 Low Stress Dielectric Photoresist

KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress buffer, passivation or protective layer.

Material uses	Material attributes
Stress buffer Passivation and protective layers	Negative tone, photoimageable dielectric No warpage due to low shrinkage and tensile modulus Solvent developable I-Line/broadband sensitivity, 1:1 aspect ratio imaging Low temperature processing (< 200°C) Good electrical properties High thermal and chemical stability Low moisture uptake

SU-8 MicroSpray Photoresist aerosol can

Kayaku Advanced Materials, Inc. aerosol spray-can photoresists are well suited for a variety of micromachining, and etching processes, requiring semi-conformal coatings on irregular or perforated substrates. MicroSpray addresses many of the process and capital requirements for MEMs, microfluidics, opto-electronics and “one-up” printed circuit boards.

Menu

Applications

Services