Semiconductor and thin film etchants for microelectronic circuits

CTS offers a large range of etchants in order to etch the following thin films: Al, Al2O3, BOE, Cr, Cr-Si, Cr-SiO, Cu, GaAs, GaN, Ga2O3, GaP, Ge, Au, Hf, HfO, In2O3, ITO, InP, Fe2O3, Polyimide, MgO, Mo, Nb, NbN, NbO, Ni-Cr, Ni, Ni-V, Pd, Pd, Ru, Si, SiC, SiO2, SiO, Si3N4, Ag, Stainless Steel, Ta, Ta3N5, Ta2O5, TaSi, Sn, SnO, Ti, TiN, Ti-W, W, SnO


Thin film

Etchants

Operating range

Recommended
etchant

Application

Al ALUMINUM ETCHANTS
@25 °C @ 40 °C Negative
&
Positive
Semiconductor & Integrated Circuits

GaAs & GaP Devices

AlSi Materials
TYPE A 30 Å/sec 80 Å/sec
TYPE D 40 Å/sec 125 Å/sec
TYPE F 30 Å/sec 80 Å/sec
Al2O3
TRANSETCH N 120 Å/min @ 180 °C SiO2 Semiconductor Devices
BOE BUFFERED OXIDE ETCH Variable Negative Semiconductor & Integrated Circuits
Cr CHROMIUM ETCHANTS
@ 40 °C Negative
&
Positive
Thin Film Circuits
Chrome Mask
1020 40 Å/sec
1020AC 32 Å/sec
Cr-Si
Cr-SiO
CHROMIUM
CERMET TFE
1000 Å/min @ 50 °C Negative Thin Film Circuits
Cu COPPER ETCHANTS
CE-100 1 mil/min @ 40 °C Screen resists
P.C.Boards
CE-200 0.5 mil/min @ 40 °C Positive
&
Negative
Thin Film Circuits
APS-100 80 Å/sec @ 40 °C
Copper Etch 49-1 22 Å/sec @ 30 °C Ni Compatibility
Copper Etch BTP 150 Å/sec @ 30 °C Negative Ni Compatibility
GaAs GALLIUM ARSENIDE
GA ETCH 100 100 Å/sec @ 40 °C Negative Microelectronic Circuits
GA ETCH 200 20 Å/sec @ 5 °C
GA ETCH 300 22 Å/sec @ 25 °C
AB ETCH Defect Delineation Semiconductor Testing
GaN GALLIUM NITRIDE 80 A/min SiO2 LED
Ga2O3 GALLIUM OXIDE 10 Å/sec @ 25 °C Negative Microelectronic Circuits
GaP GALLIUM PHOSPHIDE A Face(Ga):
115 micron/hr @ 80 °C
B Face (P):
210 micron/hr @ 80 °C
Negative Light Emitting Diodes
Ge GERMANIUM 250 Å/sec @ 20 °C Negative Semiconductor Devices
Au GOLD ETCHANTS
TFA 28 Å/sec @ 25 °C Negative & Positive Thin Film Circuits
TFAC 30 Å/sec @ 60 °C Negative GaAs compatible
GE-8148 50 Å/sec @ 25 °C Negative & Positive Ni Compatibility
GE-8110 15 Å/sec @ 25 °C Negative & Positive Ni Compatibility
GE-8111 15 Å/sec @ 25 °C Negative & Positive Ni Compatibility
Hf, HfO HAFNIUM, HAFNIUM OXIDE 45 Å/sec @ 25 °C
ALD HfO 7.5 Å/sec
Negative
Use Titanium Etch TFT
In2O3
ITO
INDIUM OXIDE
INDIUM TIN OXIDE
15 Å/sec @ 25 °C Negative Microelectronic Circuits
InP INDIUM PHOSPHIDE 30 mins @ 25 °C Negative Microelectronic Circuits
Fe2O3 IRON OXIDE MASK ETCHANT
ME-10 50 Å/sec @ 25 °C Negative
& Positive
Microelectronic Circuits
ME-30 25 Å/sec @ 25 °C
Polyimide KAPTON POLYIMIDE
ETCHANT
0.013 mil/min @ 40 °C
0.07 mil/min @ 60 °C
Negative Polyimide/Copper Clad Laminates
MgO Magnesium Oxide Etchant MgOX12 40 Å/sec @ 30°C Negative
& Positive
Mo MOLY ETCHANT TFM 55 Å/sec @ 30 °C
85 Å/sec @ 60 °C
Negative Microelectronic Circuits
Nb
NbN
NbO
Niobium
Niobium Nitride
Niobium Oxide
50Å / sec @ 25 oC Negative Microelectronics
Ni-Cr NICHROME ETCHANTS TFN
50 Å/sec @ 40 °C Negative & Positive Thin Film Circuits
Ni NICKEL ETCHANTS
TFB 30 Å/sec @ 25 °C Negative & Positive Thin Film Circuits
TFG 50 Å/sec @ 40 °C
Type I 3 mil/hr @ 40 °C
Ni-V Nickel-Vanadium Etch 30 Å/sec @ 20 °C Negative & Positive Microelectronics
Pd PALLADIUM ETCHANTS TFP
110 Å/sec @ 50 °C Negative & Positive Semiconductor Devices & Thin Film Circuits
Pd PALLADIUM ETCHANT EC
Electrochemical Etching

REAGENT SEMICONDUCTOR ETCHANTS (RSE)

Ru RUTHENIUM ETCH 20 Å/sec @ 20 °C Negative & Positive Microelectronics

SEMICONDUCTOR DEFECT DELINEATION ETCHANTS

Si SILICON MESA ETCH Variable
Semiconductor Devices
REAGENT SEMICONDUCTOR ETCHANTS (RSE) Variable KMER
SILICON SLOW ETCH Variable PKP Type I
PREFERENTIAL SILICON ETCHANTS MEMS
PSE 200 1 mil/3 min @ 100 °C Semiconductor Devices
PSE 300 25 m/hr @ 100 °C
SOLAR CELL ETCHANTS
SCE-200 1 hr @ 75-100 °C Cellules solaires
SCE-300 5-10 min @ 118 °C
WRIGHT ETCHANT Defect Characterization N/A Semiconductor Testing
WRIGHT-JENKINS ETCHANT
SIRTL ETCHANT
SiC SILICON CARBIDE 80 Å/min Negative LED
SiO2 BUFFER HF IMPROVED 800Å/min @ 25 °C
Thermally Grown
Negative Semiconductor Devices &
Integrated Circuits
BD ETCHANT Variable PSG/BSG
TIMETCH 90 Å/min @ 25 °C CVD
SILOX VAPOX III 4000 Å/min @ 22 °C CVD, Al Compatible
AIPAD Etch 639 5000 Å/min Al Compatible
BUFFERED OXIDE ETCHANTS (BOE) Variable
SiO SILICON MONOXIDE ETCH 5000 Å/min @ 85 °C Negative Semiconductor Devices
Si3N4 TRANSETCH N 125 Å/min @ 180 °C SiO2 (Silox) Semiconductor Devices & Integrated Circuits
Ag SILVER ETCHANT TFS 200 Å/sec @ 25 °C Negative & Positive Semiconductor Devices & Thin Film Circuits
Stainless Steel Nickel Etch Type I 45 Å/sec @ 25 °C, AISI 316 Negative & Positive Alloys
Ta
Ta3N5
Ta2O5
SIE-8607
Ta Etch 111
70 Å/sec @ 25 °C
30 Å/sec @ 25 °C
Negative & Positive Capacitors
Semiconductors
TaSi Tantalum Silicide Etch 50 Å/sec @ 20 °C Negative & Positive Thin Film Electronics
Sn, SnO Tin, Tin Oxide 15 Å/sec @ 25 °C Negative Microelectronic Circuits
Ti TITANIUM ETCHANTS
TFT 25 Å/sec @ 20 °C
50 Å/sec @ 30 °C
Negative Integrated Circuits
TFTN 10 Å/sec @ 70 °C
50 Å/sec @ 85 °C
Positive SiO2 Compatible
TiN Titanium Nitride Etch 30 Å/sec @ 20 °C Negative Microelectronic
Ti-W TI-TUNGSTEN ETCHANT TiW-30 20-30 Å/sec Negative & Positive Thin Film Circuits
Adhesion Layer
W TUNGSTEN ETCH TFW 140 Å/sec @ 30 °C Negative Integrated Circuits
SnO

NESA ETCHANT TE-100

0.02 micron/min @ 20 °C Screenprinting Electronic Circuits

 

Etchant/Metal Compatibility Chart

LEGENDE:
etch = significant attack, slight = slight attack, ok = no attack, surf ox = surface
oxidation, corrode = surface corrosion