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Cts offers a range of negative resists for microelectronics:
- Excellent adhesion and abrasion resistance
- Coating uniformity
- Available in different viscosities
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Name
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Spectre*
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Usage mode
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Properties
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Associated chemistry
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| KMPR |
I-line
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spray coating
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- High aspect ratio
- High plasma and chemical resitance
- Excellent resistance to abrasion and dry etch
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SU8
SU8-2000
SU8-3000
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I-line |
spray coating |
- Fabrication of PDMS moulds
- Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers
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SU8 developer
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| SU8 MicroSpray™ |
I-line
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spray coating
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- Perforated or irregular substrates
- Large substrates
- Microfluidic electrophoresis analysis
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SU8 developer
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*LEGEND : DUV=Deep UV=248nm / I-line: 365nm / g-line : 405 nm / h-line : 436
KMPR
KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the substrate. KMPR is designed to coat 4-120 µm in a single step using four standard viscosities.
KMPR can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.
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Material uses:
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Material attributes:
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• MEMS
• DRIE
• Electroplating
• Permanent Structures
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• High aspect ratio with vertical sidewalls
• High chemical and plasma resistance
• Greater than 100 µm film thickness in a single coat
• Excellent adhesion to metals
• Wet strips in conventional strippers
• Excellent dry etch resistance
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Plating
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Permanent
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Deep etch
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Plating (100 µM tall Ni posts, KMPR removed)
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Electroformed Ni gear after stripping KMPR
Source: Univ. of Birmingham
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SU-8 2000 Permanent Epoxy Resists
SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels.
| Material uses: |
Material attributes: |
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• Fabrication of PDMS molds
• Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers
• Dry etch masks
• Rapid prototyping
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• Spin coat films from 75µm
• High thermal and chemical resistance
• Optically transparent
• Compatible with i-line imaging equipment
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Cantilever |
Microfluidic actuator |
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25 µm wide, 125 µm high
Source: MicroChem
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10µm features, 50µm SU-8 2000 coating
Source: Micro Resist Technology
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Genoletet, al., IBM-Zurich, Rev. Sci.
Instrum., 70, 2398 (1999)
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N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (2002)
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